GaN High-Electron-Mobility Transistor with WN x /Cu Gate for High-Power Applications-Reference-Cited by-同舟云学术

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GaN High-Electron-Mobility Transistor with WN x /Cu Gate for High-Power Applications

Published:2015-10-16 Issue:12 Volume:44 Page:4700-4705
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hsieh Ting-En,Lin Yueh-Chin,Li Fang-Ming,Shi Wang-Cheng,Huang Yu-Xiang,Lan Wei-Cheng,Chin Ping-Chieh,Chang Edward Yi

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-015-4118-5.pdf

Reference24 articles.

1. N.Q. Zhang, S. Keller, G. Parish, S. Heikman, S.P. DenBaars, and U.K. Mishra, IEEE Electron Device Lett. 21, 421 (2000).

2. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, IEEE Electron Device Lett. 24, 161 (1999).

3. U.K. Mishra, P. Parikh, and Y.F. Wu, Proc. IEEE 90, 1022 (2002).

4. Y.C. Lin, T.Y. Kuo, Y.L. Chuang, C.H. Wu, C.H. Chang, K.N. Huang, and E.Y. Chang, Appl. Phys. Express 5, 066503 (2012).

5. Y.C. Lin, C.H. Chang, F.M. Li, L.H. Hsu, and E.Y. Chang, Appl. Phys. Express 6, 091003 (2013).

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1. Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications;physica status solidi (a);2023-02-15

2. Investigation of Barrier Layer Effect on Switching Uniformity and Synaptic Plasticity of AlN Based Conductive Bridge Random Access Memory;Electronics;2022-10-23

3. High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes;Applied Surface Science;2018-12

4. Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors;Semiconductor Science and Technology;2017-02-10

5. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications;Journal of Electronic Materials;2016-04-27

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