Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices-Reference-Cited by-同舟云学术

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Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices

Published:2018-02-26 Issue:9 Volume:47 Page:4959-4963
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Tomm Jens W.,Kernke Robert,Mura Giovanna,Vanzi Massimo,Hempel Martin,Acklin Bruno

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6144-6/fulltext.html

Reference19 articles.

1. C. Harder, Pump Diode Lasers (Amsterdam: Elsevier, 2008), p. 107.

2. J.W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, Laser Photon. Rev. 5, 422 (2011).

3. M. Furitsch, Untersuchung von Degradationsmechanismen an (Al/In)GaN-basierenden Laserdioden, 1st ed. (Göttingen: Cuvillier, 2007), p. 168.

4. T. Schoedl, U.T. Schwarz, V. Kummler, M. Furitsch, A. Leber, A. Miler, A. Lell, and V. Harle, J. Appl. Phys. 97, 1231021 (2005).

5. T. Schoedl, U.T. Schwarz, S. Miller, A. Leber, M. Furitsch, A. Lell, and V. Harle, Phys. Status Solidi A Appl. Res. 201, 2635 (2004).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers;physica status solidi (RRL) – Rapid Research Letters;2021-12-13

2. Laser Diode Reliability;Advanced Laser Diode Reliability;2021

3. Peculiar failure mechanisms in GaN power transistors;Microelectronics Reliability;2020-11

4. Infrared Defect Emission and Thermal Effect in High Power Diode Lasers;Laser & Optoelectronics Progress;2019

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