Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures-Reference-Cited by-同舟云学术

Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures

Published:2002-05 Issue:5 Volume:31 Page:395-401
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hubbard S. M.,Pavlidis D.,Valiaev V.,Eisenbach A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-002-0090-y.pdf

Reference19 articles.

1. S. Keller, G. Parish, P.T. Fini, S. Heikman, C. Chen, N. Zhang, S.P. DenBaars, and U.K. Mishra, J. Appl. Phys. 86, 5850 (1999).

2. R. Gaska, M.S. Shur, A.D. Bykhovski, A.O. Orlov, and L. Snider, J. Appl. Phys. 74, 287 (1999).

3. S. Keller, Y. Wu, G. Parish, N. Ziang, J.J. Xu, B.P. Keller, S.P. DenBaars, and U.K. Mishra, IEEE Trans. Elect. Dev. 48, 552 (2001).

4. H. Kawai, M. Hara, F. Nakamura, and S. Imanaga, Electron. Lett. 34, 592 (1998).

5. E. Alekseev, A. Eisenbach, and D. Pavlidis, 23rd Workshop on Compound Semiconductor Devices and Integrated Circuits, (WOCSDICE ’99) (Chantilly, France, May 1999), pp. 121–122.

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