Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators-Reference-Cited by-同舟云学术

Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

Published:2013-08-14 Issue:11 Volume:42 Page:3156-3163
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Lingalugari M.,Baskar K.,Chan P.-Y.,Dufilie P.,Suarez E.,Chandy J.,Heller E.,Jain F. C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-013-2696-7.pdf

Reference20 articles.

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