8-State SRAMS Based on Cladded GE Quantum Dot Gate FETS-Reference-Cited by-同舟云学术

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8-State SRAMS Based on Cladded GE Quantum Dot Gate FETS

Published:2024-07-30 Issue:02n03 Volume:33 Page:
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Saman B.¹^ORCID,Almalki A.²^ORCID,Chandy J.²^ORCID,Heller E.³^ORCID,Jain F. C.²^ORCID

Affiliation:

1. Department of Electrical Engineering, Taif University, P. O. Box 888 - 21974 Al-Hawiyah, Taif, Kingdom of Saudi Arabia

2. Department of Electrical and Computer Engineering, University of Connecticut, Connecticut 06269, USA

3. Synopsys Inc., Ossining, New York 10562, USA

Abstract

This paper describes the fabrication of quantum dot gate (QDG) [Formula: see text]-FETs using GeOx-cladded Ge quantum dot self-assembled on tunnel gate oxide. Experimental I–V characteristics exhibiting 4-states are presented. Simulations are presented for the operation of a viable 8-state SRAM using QDG-FETs.

Publisher

World Scientific Pub Co Pte Ltd

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156424400779

Reference5 articles.

1. Device and circuit modeling using novel 3-state quantum dot gate FETs

2. Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

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