Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy-Reference-Cited by-同舟云学术

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Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Published:2010-03-26 Issue:6 Volume:39 Page:694-699
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Kosemura Daisuke,Hattori Maki,Yoshida Tetsuya,Mizukoshi Toshikazu,Ogura Atsushi

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-010-1148-x.pdf

Reference25 articles.

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2. Q. Ma, S. Chiras, D.R. Clarke, and Z. Suo, J. Appl. Phys. 78, 1614 (1995).

3. S.C. Jain, A.H. Harker, A. Atkinson, and K. Pinardi, J. Appl. Phys. 78, 1630 (1995).

4. I. De Wolf, Semicond. Sci. Technol. 11, 139 (1996).

5. A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, and T. Hattori, Appl. Surf. Sci. 254, 6229 (2008).

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