Plasma-Assisted Epitaxy of Piezoelectric ScxAl1-xN Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors-Reference-Cited by-同舟云学术

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Plasma-Assisted Epitaxy of Piezoelectric ScxAl1-xN Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

Published:2022-01-22 Issue:4 Volume:51 Page:1473-1480
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Greenslit Morton^ORCID,da Cunha Mauricio Pereira,Lad Robert J.

Funder

National Energy Technology Laboratory

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-09425-2.pdf

Reference42 articles.

1. M.B. Assouar, O. Elmazria, M. El Hakiki, and P. Alnot, Study of acoustical and optical properties of AlN films for SAW and BAW devices: correlation between these properties. Integr. Ferroelectr. 82, 45 (2006)

2. T. Aubert, O. Elmazria, B. Assouar, L. Bouvot, and M. Oudich, Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications. Appl. Phys. Lett. 96, 203503 (2010)

3. T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, and C. Prieto, Nanotechnology for SAW devices on AlN epilayers. Mater. Sci. Eng., B 93, 154 (2002)

4. L. Shu, J. Jiang, B. Peng, Y. Wang, and X. Liu, AlN film SAW resonator integrated with metal structure. Electron Lett 51, 379 (2015)

5. A. Nicoloiu, A. Muller, I. Zdru, D. Vasilache, G.E. Stan, C. Nastase, V. Dumitru, A. Dinescu, AIN/Si based SAW resonators for very high sensitivity temperature sensors. IEEE Int. Ultra Sym. (2018), p. 1

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Temperature Harsh-Environment SAW Sensor Technology;2023 IEEE International Ultrasonics Symposium (IUS);2023-09-03

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