Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition-Reference-Cited by-同舟云学术

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Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

Published:2012-12 Issue:6 Volume:18 Page:1055-1060
ISSN:1598-9623
Container-title:Metals and Materials International
language:en
Short-container-title:Met. Mater. Int.

Author:

Woo Chang Ho,Ahn Cheol Hyoun,Kwon Yong Hun,Han Jae-Hee,Cho Hyung Koun

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s12540-012-6020-5.pdf

Reference32 articles.

1. K. S. Son, J. S. Jung, K. H. Lee, T. S. Kim, J. S. Park, Y. H. Choi, K. C. Park, J. Y. Kwon, B. W. Koo, and S. Y. Lee, IEEE. Electron Device Lett. 31, 219 (2010).

2. J.-S. Park, T.-W. Kim, D. Stryakhilev, J.-S. Lee, S.-G. An, Y.-S. Pyo, D.-B. Lee, Y. G. Mo, D.-U. Jin, and H. K. Chung, Appl. Phys. Lett. 95, 013503 (2009).

3. C. Yang, K. Hong, J. Jang, D. S. Chung, T. K. An, W.-S. Choi, and C. E. Park, Nanotchnology 20, 465201 (2009).

4. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).

5. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Jap. J. Appl. Phys. 45, 4303 (2006).

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2. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors;Applied Physics Letters;2018-03-05

3. Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes;ACS Applied Materials & Interfaces;2017-10-13

4. Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1−xO3semiconductor;Journal of Physics D: Applied Physics;2016-05-12

5. Effect of atomic layer deposited aluminium oxide on mechanical properties of porous silicon carbide;Ceramics International;2015-07

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