The effect of a continuous etch on the growth rate and morphology of InP prepared by the vapor phase epitaxial-hydride method-Reference-Cited by-同舟云学术

The effect of a continuous etch on the growth rate and morphology of InP prepared by the vapor phase epitaxial-hydride method

Published:1982-07 Issue:4 Volume:11 Page:647-662
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Erstfeld Thomas E.,Quinlan Kenneth P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02672389.pdf

Reference24 articles.

1. P. C. Chen, K. L. Yu, S. Margalit, and A. Yariv, Appl. Phys. Lett.38, 301 (1981).

2. G. H. Olsen, T. J. Zamerowski and N. J. Digiuseppe, Electron. Lett.16, 516 (1980)

3. G. H. Olsen and T. J. Zamerowski, “Crystal Growth and Properties of Binary, Ternary and Quaternary (In,Ga) (As,P) Alloys grown by the Hydride Vapor Phase Epitaxy Technique,” in B.R. Pamplin (ed):Progress in Crystal Growth and Characterization. Vol II. Pergammon Press Ltd. London (1980). pp. 309–375.

4. T. Anderson, “Influence of Reaction Variables on the Electrical Properties of Homoepitaxial InP in the Hydride System.” USAF Summer Faculty Research Program. Research Reports Vol.I W.D. Peele and R.K. Kopka (eds.) SCEEE Press. 1980.

5. K. Fairhurst, D. Lee, D. S. Robertson, H. T. Parfitt and W. H. E. Wilgoss, “A Study of the Vapor Phase Epitaxy of Indium Phosphide,” Proc. 1980 NATO Sponsored InP Workshop. J.K. Kennedy, Chairman. RADC-TM-80-07 (June, 1980). Rome Air Development Center, Hanscom AFB, MA 01731.

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4. References;Thin Films by Chemical Vapour Deposition;1990

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