1.5–1.7 μm v.p.e. InGaAsP/InP c.w. lasers-Reference-Cited by-同舟云学术

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1.5–1.7 μm v.p.e. InGaAsP/InP c.w. lasers

Published:1980 Issue:13 Volume:16 Page:516
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Olsen G.H.,Zamerowski T.J.,Digiuseppe N.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19800361?crawler=true&mimetype=application/pdf

Reference18 articles.

1. JACOBS, P. F.: Private communication

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optoelectronic Materials;Crucial Issues in Semiconductor Materials and Processing Technologies;1992

2. References;Thin Films by Chemical Vapour Deposition;1990

3. Evaluation of the Damaged Layers Formed during the Wafer Processing of InP Wafers;Journal of The Electrochemical Society;1987-04-01

4. 1.3‐μm InGaAsP continuous‐wave lasers vapor grown on (311) and (511) InP substrates;Journal of Applied Physics;1983-06

5. High‐output room‐temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy;Journal of Applied Physics;1983-05

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