High‐output room‐temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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High‐output room‐temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy

Published:1983-05 Issue:5 Volume:54 Page:2177-2182
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

DeFreez R. K.,Elliott R. A.,Blakemore J. S.,Miller B. I.,McFee J. H.,Martin R. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.332396

Reference43 articles.

1. Bandgap and lattice constant of GaInAsP as a function of alloy composition

2. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm

3. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP

4. Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers

5. GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in Integrated Optics;Springer Series in Optical Sciences;1984

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