GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91939
Reference7 articles.
1. GaAs integrated optical circuits by wet chemical etching
2. Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
3. Monolithic integration of an injection laser and a metal semiconductor field effect transistor
4. GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors
5. InGaAsP double heterostructure lasers (λ=1.3 μm) with etched reflectors
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1. InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications;Micromachines;2023-02-09
2. Etching of InP by H3PO4, H2O2Solutions;Japanese Journal of Applied Physics;1990-10-20
3. Lasing characteristics of 0.8‐μm InGaAsP/GaAs lasers fabricated by wet chemical etching;Journal of Applied Physics;1989-05-15
4. AlGaAs burying growth for InGaAsP/GaAs buried heterostructure lasers by liquid-phase epitaxy;Journal of Crystal Growth;1989-04
5. Focused-ion-beam micromachined AlGaAs semiconductor laser mirrors;Electronics Letters;1986
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