Embedded epitaxial growth of low‐threshold GaInAsP/InP injection lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92366
Reference8 articles.
1. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm
2. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP
3. GaInAsP/InP double-heterostructure lasers for fiber odtic communications
4. Liquid phase epitaxial In1−xGaxAsyP1−ylattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
5. Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser;Applied Physics Letters;1985-02-15
2. Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers;IEEE Journal of Quantum Electronics;1984-08
3. InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy;Journal of Lightwave Technology;1984
4. High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy;Applied Physics Letters;1983-01-15
5. Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate;Applied Physics Letters;1982-10
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