High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93872
Reference13 articles.
1. Output power saturation of BH laser under high current operation
2. Transverse mode control in InGaAsP/InP buried crescent diode lasers
3. Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
4. Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasers
5. Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 μm
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1.55 μm high‐power large optical cavity lasers;Applied Physics Letters;1991-12-09
2. Effects of zinc doping of the antimeltback layer on 1.55‐μm InGaAsP/InP lasers;Journal of Applied Physics;1985-02
3. Liquid phase epitaxial growth of InGaAsP and InP on mesa-patterned InP substrates;Journal of Crystal Growth;1985-01
4. High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy;Applied Physics Letters;1984-08-15
5. InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength;IEEE Journal of Quantum Electronics;1984-08
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