High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy-Reference-Cited by-同舟云学术

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High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

Published:1984-08-15 Issue:4 Volume:45 Page:328-330
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Horikawa H.,Imanaka K.,Matoba A.,Kawai Y.,Sakuta M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95257

Reference7 articles.

1. Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

2. V-grooved substrate buried heterostructure InGaAsP/InP laser

3. InGaAsP/InP buried crescent laser emitting at 1.3 μm with very low threshold current

4. Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasers

5. High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.55 μm high‐power large optical cavity lasers;Applied Physics Letters;1991-12-09

2. High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers;IEEE Journal of Quantum Electronics;1987-06

3. Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxy;Electronics Letters;1987-02-26

4. LPE growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01

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