Applications
Reference86 articles.
1. F Faggin and T Klein, “Silicon gate technology,” Solid-State Electron. 13, 1125–1144 (August 1970).
2. D Peters, “Implanted-silicided polysilicon gates for VLSI transistors,” IEEE Trans. Electron Devices, ED-33, 1391–1393 (September 1986).
3. N Lifshitz, “Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon,” IEEE Trans. Electron Devices, ED-32, 617–621 (March 1985).
4. Tech. Digest International Electron Devices Meeting;H Sunami,1985
5. C M Osburn and E Bassous, “Improved dielectric reliability of SiO2 films with polycrystalline silicon electrodes,” J. Electrochem. Soc. 122, 89–92 (January 1975).