Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon-Reference-Cited by-同舟云学术

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Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon

Published:1985-03 Issue:3 Volume:32 Page:617-621
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lifshitz N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31925/01484733.pdf?arnumber=1484733

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