An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications-Reference-Cited by-同舟云学术

An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications

Published:1995 Issue: Volume: Page:83-114
ISSN:
Container-title:Low-Voltage Low-Power Analog Integrated Circuits
language:
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Author:

Enz Christian C.,Krummenacher François,Vittoz Eric A.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-2283-6_7.pdf

Reference27 articles.

1. Y. P. Tsividis, Operation and Modelling of the MOS Transistor, McGraw-Hill, 1987.

2. C. C. Enz, “High precision CMOS micropower amplifiers,” Ph.D. thesis, No. 802, EPFL, Lausanne, 1989.

3. E. A. Vittoz, “Micropower techniques,” inDesign of MOS VLSI Circuits for Telecommunicationsedited by J. Franca and Y. Tsividis, Prentice-Hall, 1993.

4. E. A. Vittoz, “MOS transistor,” Intensive Summer Course on CMOS & BiCMOS VLSI Design, Analog&Digital, Lausanne (EPFL), Switzerland, September 1993.

5. J. A. van Nielen and O. W. Memelink, “Influence of substrate upon the DC characteristics of MOS transistors,” Philips Research Reports, vol. 22 pp. 55–71,1967.

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