Analytics of CVD Processes in the Deposition of SiC by Methyltrichlorosilane
Author:
Publisher
Springer Science and Business Media LLC
Subject
Analytical Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s006040070095.pdf
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CFD simulation of CVD reactors in the CH3SiCl3(MTS)/H2 system using a two-step MTS decomposition and one-step SiC growth models;Heliyon;2023-04
2. Thermal decomposition of methyltrichlorosilane/ hydrogen/ inert mixtures at conditions relevant for chemical vapor infiltration of SiC ceramics;International Journal of Chemical Kinetics;2022-01-05
3. Thin film coating of silicon carbide on zircaloy-4 tube by FCVD process and a study on its kinetics;Journal of Nuclear Materials;2021-08
4. Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH 3 SiCl 3;International Journal of Chemical Kinetics;2021-01-11
5. Insight into microstructural architectures contributing to the tensile strength of continuous W-core SiC fiber;Journal of the European Ceramic Society;2020-12
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