Preparation of In2Se3 layers on InAs by heterovalent substitution-Reference-Cited by-同舟云学术

Preparation of In2Se3 layers on InAs by heterovalent substitution

Published:2000-09 Issue:9 Volume:36 Page:864-867
ISSN:0020-1685
Container-title:Inorganic Materials
language:en
Short-container-title:Inorg Mater

Author:

Bezryadin N. N.,Budanov A. V.,Tatokhin E. A.,Agapov B. L.,Linnik A. V.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF02758692.pdf

Reference8 articles.

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2. Shirokov, A.A., Usov, Yu.N., and Zakharov, I.S., MIS Structures on InAs,Izv. Akad. Nauk SSSR, Neorg. Mater., 1985, vol. 21, no. 2, pp. 194–196.

3. Sysoev, B.I., Strygin, V.D., Chursina, E.I., and Kotov, G.I., Kinetics of the Formation of Ga2Se3/GaAs Heterostructures during Heat Treatment of GaAs Substrates in Selenium Vapor,Izv. Akad. Nauk SSSR, Neorg. Mater., 1991, vol. 27, no. 8, pp. 1583–1585.

4. Sysoev, B.I., Bezryadin, N.N., Budanov, A.V., and Shlyk, Yu.K., Preparation and Electrical Characteristics of In2S3/InAs Heterostructures,Mikroelektronika, 1990, vol. 19, no. 6, pp. 591–594.

5. Sysoev, B.I., Bezryadin, N.N., Budanov, A.V.,et al., Structure of Indium Sulfide Layers on InAs,Neorg. Mater., 1995, vol. 31, no. 7, pp. 891–895 [Inorg. Mater. (Engl. Transl.), vol. 31, no. 7, pp. 817–821].

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