Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures-Reference-Cited by-同舟云学术

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Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures

Published:2011-05 Issue:3 Volume:56 Page:526-530
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Bezryadin N. N.,Kotov G. I.,Kuzubov S. V.,Boldyreva Ya. A.,Agapov B. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774510061021.pdf

Reference16 articles.

1. V. N. Bessolov and M. V. Lebedev, Fiz. Tekh. Poluprovodn. 32(11), 1281 (1998).

2. B. I. Sysoev, N. N. Bezryadin, G. I. Kotov, et al., Fiz. Tekh. Poluprovodn. 29(1), 24 (1995).

3. N. N. Bezryadin, E. A. Tatokhin, I. N. Arsent’ev, et al., Fiz. Tekh. Poluprovodn. 33(12), 1447 (1999).

4. B. I. Sysoev, B. L. Agapov, N. N. Bezryadin, T. V. Prokopova, and Yu. K. Shlyk, Neorg. Mater. 32(12), 1449 (1996).

5. N. N. Bezryadin, A. V. Budanov, E. A. Tatokhin, et al., Neorg. Mater. 36(9), 1037 (2000).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates;Crystallography Reports;2017-09

2. Structural and phase transformation of A III B V(100) semiconductor surface in interaction with selenium;Crystallography Reports;2015-03

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