Nanolayer of the A 2 III B 3 VI (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)-Reference-Cited by-同舟云学术

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Nanolayer of the A 2 III B 3 VI (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)

Published:2010-09 Issue:5 Volume:55 Page:845-848
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Bezryadin N. N.,Kotov G. I.,Kuzubov S. V.,Agapov B. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S106377451005024X.pdf

Reference12 articles.

1. W. E. Spicer, Surf. Sci. 86, 763 (1979).

2. V. N. Bessolov and M. V. Lebedev, Fiz. Tekh. Poluprovodn. 32(11), 1281 (1998) [Semiconductors 32 (11), 1141 (1998)].

3. M. V. Lebedev, N. Shimomura, and Ya. Fukuda, Fiz. Tekh. Poluprovodn. 41(5), 539 (2007) [Semiconductors 41 (5), 521 (2007)].

4. A. Ohtake, T. Komura, T. Hanada, et al., Phys. Rev. B 59(12), 8032 (1999).

5. B. I. Sysoev, N. N. Bezryadin, G. I. Kotov, et al., Fiz. Tekh. Poluprovodn. 29(1), 24 (1995) [Semiconductors 29 (1), 12 (1995)].

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1. Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates;Crystallography Reports;2017-09

2. Passivation of the GaP(111) surface by treatment in selenium vapors;Technical Physics Letters;2014-02

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