Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Published:2009-11 Issue:6 Volume:16 Page:575-577
ISSN:1340-6000
Container-title:Optical Review
language:en
Short-container-title:OPT REV

Author:

Liu Yi-Jung,Yen Chih-Hung,Hsu Chia-Hao,Yu Kuo-Hui,Chen Li-Yang,Tsai Tsung-Han,Liu Wen-Chau

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s10043-009-0113-5.pdf

Reference18 articles.

1. K. Streubel, N. Linder, R. Wirth, and A. Jaeger: IEEE J. Sel. Top. Quantum Electron. 8 (2002) 321.

2. R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang, M. C. Craford, and V. M. Robbins: J. Electron. Mater. 20 (1991) 1125.

3. J. W. Shi, I. K. Sheu, and C. K. Wang: IEEE Photonics Technol. Lett. 19 (2007) 1368.

4. J. M. Hwang, K. F. Lee, and H. L. Hwang: J. Phys. Chem. Solids 69 (2008) 752.

5. H. Kim, J. Cho, and J. W. Lee: IEEE J. Quantum Electron. 43 (2007) 625.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of p-Si/n-In2O3 and p-Si/n-ITO junction diodes for optoelectronic device applications;Surfaces and Interfaces;2021-04

2. Ohmic contact of indium oxide as transparent electrode to n-type indium phosphide;RSC Advances;2015

3. On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface;IEEE Electron Device Letters;2012-02

4. Optical and Electrical Properties of Indium Oxide Thin Films as Transparent Electrode to Indium Phosphide;Conference on Lasers and Electro-Optics 2012;2012

5. Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode;Optics Express;2011-07-15

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