Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference15 articles.
1. Current crowding in GaN/InGaN light emitting diodes on insulating substrates
2. Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
3. On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure
4. Highly Reliable GaN-Based Light-Emitting Diodes Formed by p–<tex>$hboxIn_0.1hboxGa_0.9hboxN$</tex>–ITO Structure
5. High brightness ingan green leds with an ito on n/sup ++/ -sps upper contact
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes;Journal of Materials Chemistry C;2020
2. Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing;Nanomaterials;2019-02-04
3. Study of a GaN-Based LED With an Al/AZO Composite Transparent Conductive Layer;IEEE Transactions on Electron Devices;2017-09
4. High-Performance GaN-Based LEDs With AZO/ITO Thin Films as Transparent Contact Layers;IEEE Transactions on Electron Devices;2017-06
5. Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns;IEEE Transactions on Electron Devices;2017-06
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