Ohmic contact of indium oxide as transparent electrode to n-type indium phosphide
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science
2. Northwestern University
3. Evanston
4. USA
5. State Key Laboratory of Solidification Processing
Abstract
Ohmic contacts of n-type indium phosphide (n-InP) with indium oxide (In2O3), a transparent conducting oxide (TCO), have been achieved.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA00034C
Reference39 articles.
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1. Optimization of Nano-structured Tin Doped Indium Oxide Films Grown at Substrate Temperature close to the Melting Point of Tin;Materials Today: Proceedings;2019
2. Melting point of Sn as the optimal growth temperature in realizing the favored transparent conducting properties of In2O3:Sn films;Journal of Alloys and Compounds;2018-10
3. Cadmium-Based Nanomaterials;Cadmium based II-VI Semiconducting Nanomaterials;2017-11-12
4. Ohmic contacts of ZnO/SnO2 equal-cosubstituted In2O3 films to n-InP and p-GaAs;RSC Advances;2015
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