Influence of phosphorous content on microstructure development at the Ni-P Plating/SAC interface-Reference-Cited by-同舟云学术

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Influence of phosphorous content on microstructure development at the Ni-P Plating/SAC interface

Published:2016-01 Issue:1 Volume:12 Page:178-185
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Huber Zbigniew,Wojewoda-Budka Joanna,Wierzbicka-Miernik Anna,Sypien Anna,Szczerba Maciej,Zieba Pawel

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-015-5095-9.pdf

Reference21 articles.

1. D. J. Lee and H. S. Lee, Microelectron. Reliab. 46, 1119 (2006).

2. Y. C. Sohn, J. Yu, S. K. Kang, W. K. Choi, and D. Y. Shih, J. Mater. Res. 18, 4 (2003).

3. Y. C. Sohn, J. Yu, S. K. Kang, D. Y. Shih, and W. K. Choi, J. Electron. Mater. 33, 790 (2004).

4. S. H. Park and D. N. Lee, J. Mater. Sci. 23, 1643 (1988).

5. K. H. Hur, J. H. Jeong, and D. N. Lee, J. Mater. Sci. 25, 2573 (1990).

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