Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Yang, S.H., Bak, J.Y., Yoon, S.M., Ryu, M.K., Oh, H.C., Hwang, C.S., Kim, G.H., KoPark, S.H., Jang, J.: Low temperature processed flexible In–Ga–Zn–O thin-film transistors exhibiting high electrical performance. IEEE Electron Device Lett. 32, 1692 (2011)
2. Toshio, K., Nomura, K., Hosono, H.: Present status of amorphous In–Ga–Zn–O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010)
3. Kim, H.J., Park, J.W., Park, J.M., Woo, H.T., Lee, J.Y., Park, Y.S., Khim, T.Y., Kim, J.H., Lee, J.S., Song, J.K., Choi, B.D.: Charging compensation layer on polyimide for enhanced device stability in flexible technology. Electron. Mater. Lett. 56, 1 (2021)
4. Liu, P., Chena, T.P., Liub, Z., Tana, C.S., Leong, K.C.: Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films. Thin Solid Films 545, 533 (2013)
5. Park, J.S., Jeong, J.K., Mo, Y.G., Kim, H.D.: Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment. Appl. Phys. Lett. 90, 262106 (2007)
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