Formation mechanism of thermally optimized Ga-doped MgZnO transparent conducting electrodes for GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Formation mechanism of thermally optimized Ga-doped MgZnO transparent conducting electrodes for GaN-based light-emitting diodes

Published:2015-05 Issue:3 Volume:11 Page:494-499
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Jang Seon-Ho,Jo Yong-Ryun,Lee Young-Woong,Kim Sei-Min,Kim Bong-Joong,Bae Jae-Hyun,An Huei-Chun,Jang Ja-Soon

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-014-4352-7.pdf

Reference31 articles.

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2. H. Liu, V. Avrutin, N. Izyumskaya, U. Ozgur, and H. Morkoc, Superlattice. Microst. 48, 458 (2010).

3. L. G. De Arco, Y. Zhang, C. W. Schlenker, K. Ryu, M. E. Thompson, and C. Zhou, ACS Nano 4, 2865 (2010).

4. C. G. Granqvist, Sol. Energy Mater. Sol. Cells 91, 1529 (2007).

5. U. Betz, M. Kharrazi Olsson, J. Marthy, M. F. Escolá, and F. Atamny, Surf. Coat. Technol. 200, 5751 (2006).

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