Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering-Reference-Cited by-同舟云学术

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Bottom-gate amorphous In2O3 thin film transistors fabricated by magnetron sputtering

Published:2013-05 Issue:3 Volume:9 Page:279-282
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Jiao Yang,Zhang Xinan,Zhai Junxia,Yu Xiankun,Ding Linghong,Zhang Weifeng

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-012-2198-4.pdf

Reference14 articles.

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).

2. P. Gorrn, F. Ghaffari, T. Riedl, and W. Kowalsky, Solid State Electron. 53, 329 (2009).

3. J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K. S. Son, T. S. Kim, J. Y. Kwon, and S. Y. Lee, SID Int. Symp. Digest Tech. Papers 39, 625 (2008).

4. M. Ito, C. Miyazaki, M. Ishizaki, M. Kon, N. Ikeda, T. Okubo, R. Matsubara, K. Hatta, Y. Ugajin, and N. Sekine, J. Non-Cryst. Solids 354, 2777 (2008).

5. H. H. Hsieh and C. C. Wu, Appl. Phys. Lett. 91, 013502 (2007).

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