Chlorine‐Based High Density Plasma Etching of α-Ga2O3 Epitaxy Layer-Reference-Cited by-同舟云学术

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Chlorine‐Based High Density Plasma Etching of α-Ga2O3 Epitaxy Layer

Published:2021-02-01 Issue:2 Volume:17 Page:142-147
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Um Ji Hun,Choi Byoung Su,Jeong Dae Hwi,Choi Hyun-Ung,Hwang Sungu,Jeon Dae-Woo,Kim Jin Kon,Cho Hyun

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-020-00267-4.pdf

Reference28 articles.

1. Kyoung, S., Jung, E.S., Sung, M.Y.: Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC. Electron. Mater. Lett. 13, 368–372 (2017)

2. Kim, S., Ahn, K.S., Ryon, J.H., Kim, H.: Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors. Electron. Mater. Lett. 13, 302–306 (2017)

3. Pearton, S.J., Yang, J., Cary IV, P.H., Ren, F., Kim, J.H., Tadjer, M.J., Mastro, M.A.: A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. 5, 011301 (2018)

4. Higashiwaki, M., Murakami, H., Kumagai, Y., Kuramta, A.: Current status of power devices. Jpn. J. Appl. Phys. 55, 1202A1:1–7 (2016)

5. Kim, M., Seo, J.H., Singisetti, U., Ma, Z.: Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond. J. Mater. Chem. C 5, 8338–8354 (2017)

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1. Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching;Optics Communications;2024-10

2. Nanoscale Etching of La0.7Sr0.3MnO3 Without Etch Lag Using Chlorine Based Inductively Coupled Plasma;Electronic Materials Letters;2023-01-07

3. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga₂O₃ toward realizing power device applications;Applied Physics Letters;2022-12-26

4. α-Gallium Oxide Films on Microcavity-Embedded Sapphire Substrates Grown by Mist Chemical Vapor Deposition for High-Breakdown Voltage Schottky Diodes;ACS Applied Materials & Interfaces;2022-01-18

5. Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective;Electronic Materials Letters;2022-01-06

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