Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress-Reference-Cited by-同舟云学术

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Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Published:2012-08 Issue:4 Volume:8 Page:375-379
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lim Young Soo,Seo Seul Gi,Kim Bo Bae,Choi Hyoung-Seuk,Seo Won-Seon,Cho Yong Soo,Park Hyung-Ho

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-012-2006-1.pdf

Reference25 articles.

1. B. Y. Oh, M. C. Jeong, T. H. Moon, W. Lee, J. M. Myoung, J. Y. Hwang, and D. S. Seo, J. Appl. Phys. 99, 124505 (2006).

2. A. Gupta and A. D. Compaan, Appl. Phys. Lett. 85, 684 (2004).

3. X. Jiang, F. L. Wong, M. K. Fung, and S. T. Lee, Appl. Phys. Lett. 83, 1875 (2003).

4. T. Minami, Mater. Res. Soc. Bull. 25, 38 (2000).

5. S. Kim, J. Seo, H. W. Jang, J. Bang, W. Lee, T. Lee, and J. M. Myoung, Appl. Surf. Sci. 255, 4616 (2009).

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2. Crystal Structure and Optical Properties of Al-Doped ZnO Large-Area Thin Films Using 1500 mm Dual Cylindrical Cathodes;Journal of Nanoscience and Nanotechnology;2015-11-01

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4. Study of Plasma Properties for the Low-Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering;Plasma Processes and Polymers;2015-08-06

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