Effects of Substrate Bias and Ar Pressure on Growth of α-phase in W Thin Films Deposited by RF Magnetron Sputtering
Author:
Funder
Ministry of Science and ICT, South Korea
Samsung
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-022-00399-9.pdf
Reference25 articles.
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3. Xu D.E., Chow J., Mayer M., Jung J.P., Yoon J.H.: Sn-Ag-Cu to Cu joint current aging test and evolution of resistance and microstructure. Electron Mater Lett 11(6), 1078–1084 (2015). https://doi.org/10.1007/s13391-015-5201-z
4. Lee Y.J., Shin H.A., Nam D.H., Yeon H.W., Nam B., Woo K., Joo Y.C.: Improvements of mechanical fatigue reliability of Cu interconnects on flexible substrates through MoTi alloy under-layer. Electron Mater Lett 11(1), 149–154 (2015). https://doi.org/10.1007/s13391-014-4191-6
5. Ganesh, K., Gaidhane, V.H. 2020 Tungsten as an interconnect material for next-generation IC design. 2020 IEEE international Iot, electronics and mechatronics conference (Iemtronics 2020), 443–448. DOI: https://doi.org/10.1109/IEMTRONICS51293.2020.9216452
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