Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure-Reference-Cited by-同舟云学术

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Published:2016-03 Issue:2 Volume:12 Page:232-236
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Chakraborty Apurba,Ghosh Saptarsi,Mukhopadhyay Partha,Jana Sanjay K.,Dinara Syed Mukulika,Bag Ankush,Mahata Mihir K.,Kumar Rahul,Das Subhashis,Das Palash,Biswas Dhrubes

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-015-5249-9.pdf

Reference24 articles.

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