Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films-Reference-Cited by-同舟云学术

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Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

Published:2017-08-01 Issue:6 Volume:13 Page:483-488
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Guo Daoyou,Qin Xinyuan,Lv Ming,Shi Haoze,Su Yuanli,Yao Guosheng,Wang Shunli,Li Chaorong,Li Peigang,Tang Weihua

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s13391-017-7072-y/fulltext.html

Reference27 articles.

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2. X. L. Zhao, Z. P. Wu, D. Y. Guo, W. Cui, P. G. Li, Y. H. An, L. H. Li, and W. H. Tang, Semicond. Sci. Technol. 31, 065010 (2016).

3. M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi, Semicond. Sci. Technol. 31, 034001 (2016).

4. L. Dong, R. Jia, B. Xin, B. Peng, and Y. Zhang, Sci. Rep. 7, 40160 (2017).

5. D. Y. Guo, Y. H. An, W. Cui, Y. S. Zhi, X. L. Zhao, M. Lei, L. H. Li, P. G. Li, Z. P. Wu, and W. H. Tang, Sci. Rep. 6, 25166 (2016).

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