Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology-Reference-Cited by-同舟云学术

Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology

Published:2000 Issue: Volume: Page:47-54
ISSN:
Container-title:Perspectives, Science and Technologies for Novel Silicon on Insulator Devices
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Author:

Popov V. P.,Antonova I. V.,Stas V. F.,Mironova L. V.,Neustroev E. P.,Gutakovskii A.,Franzusov A. A.,Feofanov G. N.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-4261-8_4

Reference9 articles.

1. Bruel, M., Aspar, B., Maleville, C., Monceau, H., Auberton-Herve, A.J., Barge, T. (1997) Unibond SOI wafers achieved by smart-cut process, Electrochem. Soc. Proceedings, 97-23, 3–14.

2. Bruel, M. (1996) Nucl. Inst. Meths. B, 108, 313.

3. Ionescu, A.M, Cristoloveanu, S., Wilson, S.R., Rrusu, A., Chovet A., Seghir, H. (1996) Improved characterization of full-depleted SOI wafers by pseudo-MOS transistor, Nucl. Inst. Meths. B 112, 228–232.

4. Hara, T., Kakizaki, Y., Oshima, S., Kitamura, T. (1998) Annealing effects in the delamination of H implanted silicon,, Electrochem. Soc. Proceedings, 97-23, 33–38.

5. Popov, V.P., Neustroev, E.P., Antonova I.V., Stas, V.F., Obodnikov, V.I. (1998) Donor center formation in hydrogen implanted silicon, European Material Research Society spring meeting, paper AP9.

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