Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor-Reference-Cited by-同舟云学术

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Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor

Published:1996-05 Issue:1-4 Volume:112 Page:228-232
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ionescu A.M.,Cristoloveanu S.,Wilson S.R.,Rusu A.,Chovet A.,Seghir H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. In situ pseudo—MOS transistor in as-grown silicon on insulator wafers

2. Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Method to Extract Bulk Carrier Mobility in Germanium-on-Insulator;IEEE Transactions on Electron Devices;2008-05

2. The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs;IEEE Transactions on Electron Devices;2004-09

3. The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs;IEEE Transactions on Electron Devices;2004-07

4. SOI Materials Characterization;Silicon-on-Insulator Technology: Materials to VLSI;2004

5. SOI bulk and surface generation properties measured with the pseudo-MOSFET;IEEE Transactions on Electron Devices;2002-10

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