Author:
Tonneau D.,Clement N.,Houel A.,Bonnail N.,Dallaporta H.,Safarov V.
Reference61 articles.
1. Taur, Y., Buchanan, D. A., Chen, W., Frank, D. J., Ismail, K. E., Lo, S-H., Sai-Halasz, G.A., Viswanthan, R. G., Wann, H.-J. C., Wind, S. J. and Wong, H.S. (1997), “CMOS Scaling into the Nanometer Regime”, in Proc. IEEE 85, 486–504.
2. Pikus, F. G., Likharev, K. K. (1997), “Nanoscale Field-Effect Transistor: an Ultimate Size Analysis”, Appl. Phys. Lett. 71(25), 3661–3663.
3. Grabert, H. and Dévoret, M. H. (1992), Single Charge Tunneling, Nato ASI Series vol.294, Plenum Press, 1–19.
4. Averin, D. D. and Likharev, K. K. (1991), Mesoscopic Phenomena in Solids, (B. Altshuler ed.), Elsevier, Amsterdam.
5. Vieu, C., Carcenac, F., Pépin, A., Chen, Y., Mejias, M., Lebib, A., Manin-Ferlazzo, L., Couraud, L. and Launois, H. (2000), “Electron Beam Lithography: Resolution Limits and Applications”, Appl. Surf. Sci. 164, 111–117.