Computer Simulation of Stopping and Sputtering-Reference-Cited by-同舟云学术

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Computer Simulation of Stopping and Sputtering

Published:1989 Issue: Volume: Page:151-184
ISSN:
Container-title:Materials Modification by High-fluence Ion Beams
language:
Short-container-title:

Author:

Möller Wolfhard

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-1267-0_11.pdf

Reference90 articles.

1. D.T. Goldmann, D.E. Harrison, Jr., and R.R. Coveyeau, ORNL 2729 (1959)

2. J.B. Gibson, A.N. Goland, M. Milgram, and G.H. Vineyard, Phys. Rev. 120 (1960) 1229

3. M. Yoshida, J.Phys.Soc.Jpn. 16 (1961) 44

4. J. Lindhard, M. Scharff, and H.E. Schiott, Mat.-Fys.Medd. Kgl.Dan. Vid.Selsk. 33 (1963) No. 14

5. P. Sigmund, Phys. Rev. 184 (1969) 383

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1. Interpretation of TOF–SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation;Applied Physics A;2005-06

2. Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study;Applied Surface Science;2004-06

3. The Role of Ions for the Deposition of Hydrocarbon Films, investigated by In-Situ Ellipsometry;MRS Proceedings;1995

4. Modeling of ion-assisted deposition using BCA computer simulation;Radiation Effects and Defects in Solids;1994-07

5. Capabilities of dynamic BCA simulations;Radiation Effects and Defects in Solids;1994-06

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