Materials aspects and implementation of silicides for ULSI-Reference-Cited by-同舟云学术

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Materials aspects and implementation of silicides for ULSI

Published:1992 Issue: Volume: Page:337-361
ISSN:
Container-title:Crucial Issues in Semiconductor Materials and Processing Technologies
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Author:

Maex Karen

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-2714-1_34

Reference52 articles.

1. M.-A. Nicolet and S.S. Lau, in: VLSI Electronics, Microstructure Science, eds. N.G. Einspruch and G.B. Larrabee (Academic Press, New York, 1983), Vol. 6, p. 330.

2. F.M. d’Heurle and P. Gas, J. Mater. Res. 1 (1986) 205.

3. G.J. van Gurp, W.F. van der Weg and D. Sigurd, J. Appl. Phys. 49 (1978) 4011.

4. C.M. Comrie and J.E. McLeod, these proceedings.

5. Robert Beyers, J. Appl. Phys. 56 (1984) 147.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling Geometrical Effects of Parasitic and Contact Resistance of FET Devices;MRS Proceedings;1996

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