Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Silicon
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Springer Netherlands
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http://link.springer.com/content/pdf/10.1007/978-94-009-0355-5_35.pdf
Reference11 articles.
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2. Tamura, M. and Suzuki, T. (1989) Damage formation and annealing of high energy ion implantation in Si, Nucl. Instr. and Meth. B 39, 318–329.
3. Mohadjery, B., Williams, J.S. and Wong-Leung J. (1995) Gettering of nickel to cavities in silicon introduced by hydrogen implantation, Appl. Phys. Lett. 66, 1889–1891.
4. Magee, C.W. and Botnick, E.M. (1981) Hydrogen depth profiling using SIMS - Problems and their solutions, J. Vac.Sci. Technol 19,47–52.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?;Journal of The Electrochemical Society;2009
2. Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon;MRS Proceedings;1997
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