Gettering of nickel to cavities in silicon introduced by hydrogen implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113311
Reference11 articles.
Cited by 68 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor;IEEE Journal of the Electron Devices Society;2018
2. Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering;IEEE Transactions on Electron Devices;2017-05
3. Incorporation of oxygen in SiC implanted with hydrogen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
4. Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes;Journal of Applied Physics;2014-08-07
5. Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling;Journal of Applied Physics;2014-01-14
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