Stress in The SiO2/Si Structures Formed by Thermal Oxidation
Publisher
Springer Netherlands
Reference34 articles.
1. Workshop on oxidation processes (1987), Phil. Mag. B 55(2) pp. 113–311. and 55(6) pp. 631–763
2. Mott, N.F. Rigo, S. Rochet, F. and Stoneham, A.M. (1989) Oxidation of silicon, Phil.
Mag. B 60 189–212.
3. Irene, E.A. (1987) New results on low-temperature thermal oxidationPhil. Mag. B 55 131–145.
4. Gusev, E.P. Lu, H.C. Gustafsson, T. Garfunkel, L. (1995) Growth mechanism of thin silicon oxide films on (100)Si studied by medium-energy ion scattering, Phys. Rev. B 52 1759–1775. and references therein.
5. Landsberger, L.M. and Tiller, W.A. (1990) Two-step oxidation expeiments to determine structural and thermal history effects in thermally-grown SiO2 films on Si, J. Electrochem. Soc. 137 2825–2836.
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