New results on low-temperature thermal oxidation of silicon
Author:
Affiliation:
1. a Department of Chemistry , University of North Carolina , Chapel Hill , North Carolina , 27514 , USA
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708211200
Reference29 articles.
1. Aitken , J. M. and Irene , E. A. 1985.Silicon Dioxide Films in Semiconductor Devices, Treatise on Materials Science and Technology, Edited by: Tomozawa , M. and Doremus , R. H. Vol. 26, 1New York: Academic Press.
2. A Simplified Viscoelastic Model for the Thermal Growth of Thin SiO2 Films
3. General Relationship for the Thermal Oxidation of Silicon
4. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
5. Oxidation of silicon: strain and linear kinetics
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