Bulk FinFETs: Design at 14 nm Node and Key Characteristics-Reference-Cited by-同舟云学术

Bulk FinFETs: Design at 14 nm Node and Key Characteristics

Published:2015-07-17 Issue: Volume: Page:33-64
ISSN:2214-2541
Container-title:Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting
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Author:

Lee Jong-Ho

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-017-9990-4_2

Reference58 articles.

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5. Kedzierski J, Xuan P, Subramanian V, Anderson E, Bokor J, King T-J, Hu C (2000) A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain. Superlattices Microstruct 28(5):445–452

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