Electron and Phonon Tranports in a 3D FinFET Transistor-Reference-Cited by-同舟云学术

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Electron and Phonon Tranports in a 3D FinFET Transistor

Published:2023-04-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Advanced Systems and Emergent Technologies (IC_ASET)
language:
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Author:

Glaied Sirine¹,Nasri Faouzi²,Machhout Mohsen¹

Affiliation:

1. University of Monastir,Laboratory of electronics and microelectronics, Faculty of sciences of Monastir,Tunisia

2. Sousse Tunisia. Laboratory of thermal process Research and technology of energy,Center for research in microelectronics & nanotechnology,Tunis,Tunisia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10149846/10150436/10150723.pdf?arnumber=10150723

Reference22 articles.

1. Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes

2. A comparison of quantum correction models for the three-dimensional simulation of FinFET structures

3. Interfacial heat transport across multilayer nanofilms in ballistic–diffusive regime

4. A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

5. Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation

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