Nanostructured Silicon as an Active Optoelectronic Material-Reference-Cited by-同舟云学术

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Nanostructured Silicon as an Active Optoelectronic Material

Published:2000 Issue: Volume: Page:85-97
ISSN:
Container-title:Frontiers of Nano-Optoelectronic Systems
language:
Short-container-title:

Author:

Canham L. T.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-010-0890-7_6

Reference90 articles.

1. Canham, L.T. (1990) Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl.Phys.Lett. 57, 1046–1049.

2. Canham, L.T., Cox, T.I., Loni, A. and Simons, A.J. (1996). Progress towards silicon optoelectronics using porous silicon technology. Appl.Surf.Science. 102, 436–441.

3. Cullis, A.G., Canham, L.T. and Calcott, P.D.J. (1997). The structural and luminescent properties of porous silicon. J.Appl.Phys. 82, 909–965

4. Tsybeskov L. 1998. Nacrystalline silicon for optoelectronic applications. M.R.S. Bulletin. 234 33–38

5. Fauchet, P.M. (1999). The integration of nanoscale porous silicon light emitters: materials science, properties and integration with electronic circuitry. J.Lumin. 80, 53–64.

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