Affiliation:
1. Istituto per la Microelettronica e Microsistemi — CNR, Via P. Castellino 111 — 80131 Napoli, Italy
2. Opto-Electronic Circuits and Systems Laboratory, University of California, Los Angeles, CA 90095, USA
Abstract
In the last years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved great results. However, some significant limitations, inherent to the physics of silicon, have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. Along this line of argument, an approach based on Raman scattering in porous silicon is presented. We prove two significant advantages with respect to silicon: the broadening of spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss the prospect of Raman amplifier in porous silicon.
Publisher
World Scientific Pub Co Pte Lt
Subject
Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials