Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-007-5863-6_8
Reference82 articles.
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4. G. Franssen, E. Litwin-Staszewska, R. Piotrzkowski, T. Suski, P. Perlin, Optical and electrical properties of homoepitaxially grown multiquantum well InGaNÕGaN light-emitting diodes. J. Appl. Phys. 94, 6122 (2003)
5. M. Meneghini, S. Vaccari, N. Trivellin, D. Zhu, C. Humphreys, R. Butendheich, C. Leirer, B. Hahn, E. Zanoni, G. Meneghesso, Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs. IEEE Trans. Electron Devices 59, 1416 (2012)
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