Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability-Reference-Cited by-同舟云学术

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Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability

Published:2017-09-10 Issue: Volume: Page:131-178
ISSN:1558-9412
Container-title:Integrated Circuits and Systems
language:
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Author:

Do Nhan,Van Tran Hieu,Kotov Alex,Tiwari Vipin

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-55306-1_5

Reference45 articles.

1. http://voyager.jpl.nasa.gov/science/neptune.html

2. F. Masuoka et. al. A new Flash EEPROM cell using triple polysilicon technology, IEEE Technical Digest IEDM (1984)

3. Embedded Flash Memories for Nano-Scale VLSIs, chapter 6, Springer, Berlin

4. http://www.eetimes.com/document.asp?doc_id=1153458

5. http://ww1.microchip.com/downloads/pr_archive/en/en546947.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and Formation of Superflash Nonvolatile Memory Cells;Russian Microelectronics;2024-06

2. Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG;2024 IEEE International Memory Workshop (IMW);2024-05-12

3. Analog Tuning of Floating-Gate Cells with Sub-Elementary Charge Accuracy for In-Memory Computing Applications;2023 IEEE International Memory Workshop (IMW);2023-05

4. An ultra-low energy internally analog, externally digital vector-matrix multiplier based on NOR flash memory technology;Proceedings of the 55th Annual Design Automation Conference;2018-06-24

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