Electrical Properties of the Si–Al $$_{2}$$ 2 O $$_{3}$$ 3 Interface
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-32521-7_4
Reference46 articles.
1. Poindexter, E.H.: MOS interface states: overview and physicochemical perspective. Semicond. Sci. Technol. 4, 961–969 (1989)
2. Flietner, H., Füssel, W., Sinh, N.D., Angermann, H.: Density of states and relaxation spectra of etched, H-terminated and naturally oxidized si-surfaces and the accompanied defects. Appl. Surf. Sci. 104(105), 342–348 (1996)
3. Hattori, T., Iwauchi, S., Nagano, K., Tanaka, T.: Effect of heat treatment on the interface characteristics in reactively sputtered Al $$_2$$ 2 O $$_3$$ 3 -Si structures. Jpn. J. Appl. Phys. 10, 203–207 (1971)
4. Aguilar-Frutis, M., Garcia, M., Falcony, C.: Optical and electrical properties of aluminum oxide films deposited by spray pyrolysis. Appl. Phys. Lett. 72, 1700–1702 (1998)
5. Aguilar-Frutis, M., Garcia, M., Falcony, C., Plesch, G., Jimenez-Sandoval, S.: A study of the dielectric characteristics of aluminum oxide thin films deposited by spray pyrolysis from Al(acac) $$_3$$ 3 . Thin Solid Films 389, 200–206 (2001)
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